High Breakdown Voltage β-Ga2O3 Schottky Diodes

In recent years, rapid progress has been made on the research and development of high-voltage β-Ga2O3 Schottky barrier diodes (SBDs) for power electronic applications. This chapter presents a comprehensive survey of state-of-the-art β-Ga2O3 rectifier technologies, beginning with a tutorial on the general engineering considerations of SBDs before delving into high-voltage designs, edge-termination techniques, and breakdown mechanisms specific to β-Ga2O3. The narrative then proceeds with an examination of advanced β-Ga2O3 SBD structures, namely junction barrier Schottky diodes and trench SBDs, which have been realized for the reduction of reverse leakage current via the reduced-surface-field (RESURF) effect. Throughout the discussions, characteristic properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Finally, notable results on the high-temperature resilience of β-Ga2O3 Schottky diodes together with the enabling thermal packaging solutions are highlighted.