Ditch incorporated organic thin film transistor based organic all-p inverter: a novel approach

Abstract This paper demonstrates the static and dynamic characteristics of all-p organic inverter employing a bottom gate bottom contact organic thin film transistor with a ditch incorporated into the OSC and additional p+ doping done to its S/D nearing area. Various configurations of OTFT have been experimented with and it is found that as compared to an OTFT without extra p+ doping, the devices having additional doping show better responses. Where, for SG OTFT, I D is derived to be 18 μ s, yet the one with extra doping illustrates a swooping 16.67% increased output current of 21 μ s. To enhance the performance of the device further, a ditch of 30 nm, embedded 10 nm into the OSC is incorporated, further augmenting the performance of the device by 55.5% as compared to the conventional BGBC. Besides, the proposed inverter presents a considerably elevated performance in terms of robustness and low and high noise margins. This paper further compares the inverter using Diode Load Logic and Zero V gs Load Logic topologies, wherein it was found that DLL shows an exceptional 211% less propagation delay τ p of 27 μ s, as compared to 84 μ s delay experienced by ZVLL. But comparing the two topologies in terms of the static response, ZVLL are way better and preferred over the counterparts since ZVLL configuration displays 20.5% augmented Noise Margin, improved gain, and overall robustness. Owing to the performance parameters achieved, such organic inverters may be incorporated into integrated circuits rendering trustworthiness to digital operations in electronic circuits and numerous cascading applications. Since the organic inverters made using the proposed OTFT exhibit a decent gain hence have an apparent prospective of driving myriad-stage logic like ring oscillators and memory blocks. Moreover, these may be employed in the areas of biosensors and wearable electronics as well wherever.