AlGaAs-on-insulator integrated photonic platform for nonlinear and quantum light sources

Aluminium gallium arsenide (AlGaAs) is a promising material to realise nonlinear optical frequency conversions and photon-pair generations due to its high nonlinear optical susceptibilities. Its versatile bandgap and direct bandgap through adjustment of its alloy composition can potentially lead to a potent monolithic electrically-injected photon-pair source. In this dissertation, we will be focusing on developing the AlGaAs-on-insulator (AOI) photonic platform for nonlinear optical frequency conversions and photon-pair generations. We develop the process flow to bond commercially available AlGaAs substrates on silicon carriers. We develop dedicated etching processes to pattern our devices on AOI chips of different aluminium contents. We demonstrate loaded Q's in the range of ~104 in...[ Read more ]