仿真
记忆电阻器
计算机科学
人工神经网络
横杆开关
神经形态工程学
物理神经网络
CMOS芯片
电子工程
计算机体系结构
人工智能
工程类
循环神经网络
人工神经网络的类型
电信
经济增长
经济
作者
Heming Huang,Zhe Wang,Tong Wang,Xiao Yu,Xin Guo
标识
DOI:10.1002/aisy.202000149
摘要
Memristive devices are essential for artificial neural networks (ANNs) due to their similarity to biological synapses and neurons in structure, dynamics, and electrical behaviors. By building a crossbar array, memristive devices can be used to conduct in‐memory computing efficiently. Herein, approaches to realize memristive neural networks (memNNs) from the device level to the system level are introduced with state‐of‐art experimental demonstrations. First, algorithm fundamentals for networks and device fundamentals for synapses and neurons are briefly given to provide guidance for developing ANNs based on memristive devices; second, recent advances in memristive synapses are discussed on the device level, including the optimization of device, the emulation of biological functions and the array integration; third, artificial neurons based on complement metal‐oxide‐semiconductor (CMOS) transistors and memristive devices are described; then, systemic demonstrations and latest developments of memNNs are elaborated; finally, summary and perspective on memristive devices and memNNs are presented.
科研通智能强力驱动
Strongly Powered by AbleSci AI