凝聚态物理
范德瓦尔斯力
量子点
超导电性
量子隧道
束缚态
近藤效应
准粒子
物理
配对
带隙
量子力学
电阻率和电导率
分子
作者
T. R. Devidas,Tom Dvir,Enrico Rossi,Hadar Steinberg
出处
期刊:Physical review
[American Physical Society]
日期:2023-03-06
卷期号:107 (9)
被引量:3
标识
DOI:10.1103/physrevb.107.094502
摘要
We report the fabrication of a van der Waals tunneling device hosting a defect-bound quantum dot coupled to ${\mathrm{NbSe}}_{2}$. We find that upon application of a magnetic field, the device exhibits a zero-bias conductance peak. The peak, which splits at higher fields, is associated with a Kondo effect. At the same time, the junction retains conventional quasiparticle tunneling features at finite bias. Such coexistence of a superconducting gap and a Kondo effect are unusual, and are explained by noting the two-gap nature of the superconducting state of ${\mathrm{NbSe}}_{2}$, where a magnetic field suppresses the low-energy gap associated with the Se band. Our data shows that van der Waals architectures, and defect-bound dots in them, can serve as an effective platform for investigating the interplay of Kondo screening and superconducting pairing in unconventional superconductors.
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