材料科学
薄膜
X射线光电子能谱
拉曼光谱
微观结构
基质(水族馆)
二硫化钼
溅射沉积
电阻率和电导率
分析化学(期刊)
带隙
大气温度范围
钼
溅射
化学工程
复合材料
光电子学
纳米技术
冶金
光学
化学
海洋学
物理
电气工程
色谱法
地质学
气象学
工程类
作者
Onur Alev,Eda Goldenberg
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2023-04-27
卷期号:41 (3)
被引量:5
摘要
Molybdenum disulfide (MoS2), a two-dimensional transition-metal dichalcogenide, has the potential for applications in next-generation optoelectronic devices. In this work, MoS2 thin films were deposited by using radio frequency magnetron sputtering on glass and silicon substrates at different substrate temperatures. The effect of growth temperature on crystalline structure, morphology, compositional, optical, and electrical properties of MoS2 thin films was systematically evaluated. It is observed that surface morphology depended on the substrate temperature. Nanowormlike structures formed at the surface of films deposited at 100 and 200 °C. Raman analysis indicated that the mode separation distance for films deposited at room temperature was close to 25 cm−1 of the bulk value. However, mode separation was higher than 27 cm−1 when the substrate temperature was high. This can be attributed to sulfur vacancy in the MoS2 lattice and to strain formation. The bandgap of thin films was estimated to be in the range of 2.3–2.8 eV. X-ray photoelectron spectroscopy was used to investigate chemical composition as well as the effect of the substrate temperature on sulfur vacancies in films. Mo(IV)/S ratios were found to be 1.29, 1.94, and 1.87 for substrate temperatures of RT, 100 °C, and 200 °C, respectively. The conductivity of MoS2 thin films varied considerably with the substrate temperature during deposition. The highest conductivity, 10−13 S/cm, was observed at 300 K measurement temperature in films deposited at room temperature.
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