Design, simulation, and investigation of basic logic gates by using NAND logic gate

与非门 和或反转 逻辑门 与非门逻辑 通流晶体管逻辑 NOR门 CMOS芯片 非逻辑 XNOR门 计算机科学 等效门电路 电子工程 逻辑族 逻辑综合 数字电子学 消散 或门 晶体管 和大门 电气工程 工程类 电子线路 栅氧化层 物理 热力学 电压
作者
Wael Saad Ahmed,Nabeel Abdulrazaq Yaseen,Nsaif Jasim Al-Chaabawi
出处
期刊:Nucleation and Atmospheric Aerosols 卷期号:2591: 020006-020006 被引量:3
标识
DOI:10.1063/5.0119320
摘要

The NAND logic gate is one of the universal logic gates. We can use it to design and build a digital logic gate like (not, and, or) gates. This paper gives Design, Simulation, and Investigation of Basic gates by utilizing NAND Gate with perfect output logic standards with preserving similar performance for all digital logic in this design, we can use it easily to create very large scale integration(VLSI)designing. In our simulation has been tested on the hspice program at 32 nm CMOS technology. The results show this design has low lower dissipation and delay when compared with other designs. When compared to some of these designs, the findings reveal that the intended gate is typically quicker, shorter, and with much less energy dissipation, and there is an increase in speed and power dissipation since the processing technology improves 32nm. In addition, the suggested 4T was shown to be faster than others. In comparison to the typical CMOS NAND gate, which employs some transistors, the suggested design has provided a fresh new structure for creating a two-input NAND gate utilizing just four transistors. The suggested design gate can predict the creation of devices with significantly improved speed, energy consumption, and computationally efficiency.
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