电子工程
PMOS逻辑
物理
逻辑门
电压
晶体管
偏压
材料科学
MOSFET
线路调节
光电子学
作者
Xiaofei Ma,Yan Lu,Qiang Li,Wing-Hung Ki,Rui P. Martins
出处
期刊:IEEE Transactions on Circuits and Systems
[Institute of Electrical and Electronics Engineers]
日期:2020-07-23
卷期号:67 (11): 4041-4052
被引量:5
标识
DOI:10.1109/tcsi.2020.3009454
摘要
This paper presents an NMOS digital low-dropout regulator (LDO) with fast transient response and ultra-low quiescent current, to provide a tunable power supply for near-threshold voltage computing circuits in internet-of-things (IoT) devices. An LDO with an NMOS power transistor can enjoy the intrinsic fast transient response of the source-follower-like power stage, contributing to the proportional (P) part of the control loop. A shift-register-based digital control serves as an excellent candidate for the integral (I) part of the control loop. In addition, we propose a NAND-gate-based high-pass analog path (NAP) as the derivative (D) part of the loop, making the whole control scheme a complete PID control, therefore, achieving a fast transient response. We fabricated two versions of the prototype chip, one with a 35 pF on-chip load capacitor and a fast-transient on-chip load, and the other with no load capacitor, in 28-nm CMOS. The proposed NMOS digital LDO with NAP can handle the load transient of 160 mA/ns with 810-nA quiescent current, achieving 117-mV voltage undershoot. With the proposed techniques, we can achieve nearly two orders of better FoM when comparing it to the state-of-the-art works.
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