Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO 2 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

材料科学 钙钛矿(结构) 富勒烯 兴奋剂 掺杂剂 能量转换效率 钙钛矿太阳能电池 表面能 二氧化钛 化学工程 纳米技术 光电子学 复合材料 有机化学 工程类 化学
作者
Bingjie Wang,Jianming Yang,Linyang Lu,Wei Xiao,Haiyan Wu,Shaobing Xiong,Jianxin Tang,Chun‐Gang Duan,Qinye Bao
出处
期刊:Advanced Materials Interfaces [Wiley]
卷期号:7 (6): 1901964-1901964 被引量:29
标识
DOI:10.1002/admi.201901964
摘要

As one common electron transport material for planar n-i-p perovskite solar cell, titanium dioxide (TiO2) compact layer has several challenging issues, such as surface hydroxyl groups, high defect density, and unmatched energy levels, causing severe energy loss and poor stability at contact. To solve these problems, the authors introduce a thin [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) interlayer doped with an air stable n-type dopant, 3-dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (DMBI) to modify the TiO2 surface. The state-of-the-art characterizations demonstrate such modification significantly improves charge transfer at MAPbI3/TiO2 interface together with smaller energy level offset, leading to suppressed charge recombination. High-quality perovskite film with larger crystal grain size grows on the n-doped PCBM/TiO2 attributed to the better surface affinity. As a result, the average power conversion efficiency of perovskite solar cell exhibits a prominent improvement from 17.46% to 20.14%, with an enhancement in all device photovoltaic parameters. In addition, the stability of the device with n-doped PCBM/TiO2 is much better than that of the control device with the bare TiO2 due to hydrophobicity nature of PCBM and low defect densities in the perovskite film and at the interface. This work indicates that many further device performance improvements should be conceivable by focusing on the perovskite interface.
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