材料科学
堆积
沉积(地质)
镍
钴
制作
电解质
铜
硅
电化学
平面的
纳米技术
纵横比(航空)
冶金
光电子学
电极
化学
地质学
计算机科学
沉积物
有机化学
替代医学
古生物学
物理化学
病理
医学
计算机图形学(图像)
作者
Daniel Josell,Trevor Michael Braun,Stephen Ambrozik,Thomas P. Moffat
出处
期刊:Meeting abstracts
日期:2019-09-01
卷期号:MA2019-02 (28): 1262-1262
标识
DOI:10.1149/ma2019-02/28/1262
摘要
Superconformal, and more particularly bottom-up, copper electrodeposition in fully metallized, high aspect ratio features enables the fabrication of interconnects, including in chip stacking technologies. I will discuss mechanistic understanding of such bottom-up filling processes for cobalt, nickel, gold and copper deposition in through silicon vias from electrolytes containing (only) deposition rate suppressing additives as well as analogous bottom-up gold filling of similar size trenches from electrolyte containing deposition accelerating bismuth additive. Electrochemical measurements on planar substrates combined with mechanistic understanding enable accurate a-priori prediction of filling evolution and, for the nickel, cobalt and gold suppressor-based systems, microstructural variation associated with additive incorporation.
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