探测器
次级电子
电子
扫描电子显微镜
电子显微镜
光学
物理
材料科学
扫描透射电子显微镜
反射高能电子衍射
显微镜
能量(信号处理)
原子物理学
化学
电子衍射
衍射
核物理学
量子力学
作者
Takashi Sekiguchi,Hideo Iwaï
标识
DOI:10.7567/jjap.54.088001
摘要
A low-pass secondary electron detector has been invented for outlens scanning electron microscopy. This detector is composed of a bias grid above and an electron detector below the specimen. The upward low-energy electrons emitted from the specimen are reflected downward by the bias grid and reach the secondary electron detector. The high-energy electrons penetrate the grid and are not detected. This detector has an advantage of quantitative analysis because the secondary electron trajectories are easily traced with simple parabolic motion. The energy-filtered images of the GaN/Si sample are obtained using this detector.
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