Drop-casting CsPbBr3 perovskite quantum dots as down-shifting layer enhancing the ultraviolet response of silicon avalanche photodiode

Since the absorption zone of ultraviolet (UV) photons with high energy is limited to a few tens of nm on the surface, the high defect density caused by the processes, such as ion implantation, leads to a weak response of the silicon avalanche photodiode (APD) in the ultraviolet band. In this work, the integration of the inorganic perovskite quantum dots (QDs) film by drop-casting as the down-shifting layer is reported for enhancing the UV response of Si APD. The light generated current increases 100% under the 365 nm light emitting diode. The response of the Si APD is improved in the entire ultraviolet band. In particular, the responsivity of APD is increased by 78% at 340 nm with an exceedingly EQE of 92%. In summary, the perovskite QDs film as a down-shifting layer provides an effective and low-cost method to improve the UV response of Si APD.