材料科学
量子点
钝化
纳米技术
纳米颗粒
导电体
基质(化学分析)
光电子学
纳米晶
复合材料
图层(电子)
作者
Fei Li,Yang Liu,Guozheng Shi,Wei Chen,Renjun Guo,Dong Liu,Yaohong Zhang,Yongjie Wang,Xing Meng,Xuliang Zhang,You Lv,Wei Deng,Qing Zhang,Yao Shi,Yifan Chen,Kai Wang,Qing Shen,Zeke Liu,Peter Müller‐Buschbaum,Wanli Ma
标识
DOI:10.1002/adfm.202104457
摘要
Abstract The direct‐synthesis of conductive PbS quantum dot (QD) ink is facile, scalable, and low‐cost, boosting the future commercialization of optoelectronics based on colloidal QDs. However, manipulating the QD matrix structures still is a challenge, which limits the corresponding QD solar cell performance. Here, for the first time a coordination‐engineering strategy to finely adjust the matrix thickness around the QDs is presented, in which halogen salts are introduced into the reaction to convert the excessive insulating lead iodide into soluble iodoplumbate species. As a result, the obtained QD film exhibits shrunk insulating shells, leading to higher charge carrier transport and superior surface passivation compared to the control devices. A significantly improved power‐conversion efficiency from 10.52% to 12.12% can be achieved after the matrix engineering. Therefore, the work shows high significance in promoting the practical application of directly synthesized PbS QD inks in large‐area low‐cost optoelectronic devices.
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