X射线反射率
退火(玻璃)
材料科学
硅
溅射
纳米尺度
螺旋钻
溅射沉积
俄歇电子能谱
俄歇效应
硅化物
图层(电子)
分析化学(期刊)
光电子学
纳米技术
薄膜
化学
冶金
原子物理学
核物理学
物理
色谱法
作者
B. Q. Li,Wentao Xu,Toshiyuki Fujimoto,Isao Kojima
摘要
We report direct evidence that annealing a sputter-deposited SiO2/a-Si/SiO2 sandwiched structure on Si(100) results in the Si layer to expand. X-ray reflectivity (XRR) revealed the thickness of the Si layer to be temperature-dependent. Auger depth profiling (ADP) detected marked difference in the annealing behavior between the SiO2/a-Si and a-Si/SiO2 interfaces and oxygen diffusion into the Si layer at the a-Si/SiO2 interface. High-resolution electron microscopy observation further identified the formation of Si nanocrystals, the increase in thickness of the Si layer, and the presence of oxygen-rich nanocavities at the Si/SiO2 interface, which confirms the XRR and ADP measurements.
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