挠曲电
铁电性
材料科学
凝聚态物理
磁滞
透射电子显微镜
外延
薄膜
衍射
光学
光电子学
纳米技术
电介质
物理
图层(电子)
作者
D. Lee,Aram Yoon,S. Y. Jang,Jong‐Gul Yoon,J.-S. Chung,M. Kim,J. F. Scott,Tae Won Noh
标识
DOI:10.1103/physrevlett.107.057602
摘要
We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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