记忆电阻器
计算机科学
人工神经网络
物理神经网络
人工智能
计算机体系结构
人工神经网络的类型
时滞神经网络
电气工程
工程类
作者
Fernando Aguirre,Abu Sebastian,Manuel Le Gallo,Wenhao Song,Tong Wang,J. Joshua Yang,Wei Lü,Meng‐Fan Chang,Daniele Ielmini,Yuchao Yang,Adnan Mehonić,Anthony J. Kenyon,Marco A. Villena,J.B. Roldán,Yuting Wu,Hung-Hsi Hsu,Nagarajan Raghavan,J. Suñé,E. Miranda,Ahmed M. Eltawil
标识
DOI:10.1038/s41467-024-45670-9
摘要
Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high parallelization and near-memory computing, help alleviate the data communication bottleneck to some extent, but paradigm- shifting concepts are required. Memristors, a novel beyond-complementary metal-oxide-semiconductor (CMOS) technology, are a promising choice for memory devices due to their unique intrinsic device-level properties, enabling both storing and computing with a small, massively-parallel footprint at low power. Theoretically, this directly translates to a major boost in energy efficiency and computational throughput, but various practical challenges remain. In this work we review the latest efforts for achieving hardware-based memristive artificial neural networks (ANNs), describing with detail the working principia of each block and the different design alternatives with their own advantages and disadvantages, as well as the tools required for accurate estimation of performance metrics. Ultimately, we aim to provide a comprehensive protocol of the materials and methods involved in memristive neural networks to those aiming to start working in this field and the experts looking for a holistic approach.
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