Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth

Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization process of Mo-source precursor (MSP). However, the target product 2H-MoTe2 from Mo precursor suffers from long growth time and suboptimal crystal quality, and MoOx precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products. Here, we developed magnetron-sputtered MoO3 film for fast and high-mobility 2H-MoTe2 growth. The solid-to-solid phase transition growth mechanism of 2D MoTe2 from Mo and MoOx precursor was first experimentally unified, and the effect mechanism of MSPs on 2D MoTe2 growth was systematically elucidated. Compared with Mo and MoO2, the MoO3 precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products. Meanwhile, the lowest Gibbs free energy change of the chemical reaction results in an impressive 2H-MoTe2 growth rate of 8.07 μm/min. The constructed 2H-MoTe2 field-effect transistor array from MoO3 precursor showcases record-high hole mobility of 85 cm2·V-1·s-1, competitive on-off ratio of 3×104, and outstanding uniformity. This scalable method not only offers efficiency but also aligns with industry standards, making it a promising guideline for diverse 2D material preparation towards real-world applications.