Ultrahigh Photo‐Responsivity and Detectivity in  2D Bismuth Sulfide Photodetector for Vis–NIR Radiation

Abstract Bismuth sulfide (Bi 2 S 3 ) exhibits a direct energy bandgap and an exceptional optical absorption capability over a broadband radiation, thus presents a novel class of 2D photodetector material. The field effect transistor (FET) photodetector device is fabricated from 2D Bi 2 S 3 . An anomalous variation in the transport characteristics of 2D Bi 2 S 3 is observed with the variation in temperature. The electrical resistance reduces by 99.26% at 10 K compared to the response at 300 K. Defects due to the bismuth and sulfur vacancies play a critical role in the dramatic behavior, which is confirmed using photoluminescence, time‐resolved photoluminescence, Hall measurements, and energy dispersive X‐ray spectroscopy. The density functional theory calculations provide a significant insight into the thermodynamic properties of intrinsic defects in Bi 2 S 3 . Moreover, the effect of gate bias on responsivity additionally confirms its invariance at low temperature. The Bi 2 S 3 based FET photodetector achieves ultrahigh responsivity in the order of ≈10 6 A W −1 and detectivity of ≈10 14 Jones. Moreover, the external quantum efficiency of ≈10 7 % is measured in a wide spectrum of optical illumination (532 to 1064 nm) with a noise‐equivalent power of 3.5 × 10 −18 W/√Hz at a bias of 0.2 V. The extraordinary performance of Bi 2 S 3 photodetector outstands 2D photodetectors.