Anisotropic thermal conductivity of high bandwidth memory

Thermal management of integrated circuits (ICs) is important to prevent thermal hotspots which are the leading cause of IC failure. Thermal management is even more critical in 3D integrated circuits (3D ICs) as the prevalence of thermal hotspots is expected to increase due to the presence of polymers and solder materials that are of low thermal conductivity. Understanding how thermal conductivity is affected by the presence of these materials is required for developing thermally aware IC design. The 3{\omega} method can measure thermal conductivities spanning several orders of magnitude and is appropriate for measuring the thermal properties of layered structures such as 3D ICs. In this work, we use the 3{\omega} method with planar and cylindrical heat flow geometries to determine thermal conductivities of the memory layers and layers with polymer and solder bumps in High Bandwidth Memory (HBM) Random Access Memory (RAM). We determine the in-plane thermal conductivity of the memory layers in HBM as 140 W/m-K, while the through-plane conductivity of the polymer/solder bump layer is 2 W/m-K. Combining the results of x-ray tomography and the 3-omega measurements, we estimate that the effective in-plane thermal conductivity of the overall HBM device is 100 W/m-K while the effective through-plane thermal conductivity is 7 W/m-K. Our results show that the presence of polymers and solder metals results in a significantly decreased through-plane thermal conductivity of a 3D IC compared to a single IC die. Improvement in the thermal performance of 3D ICs will require improvement in the thermal conductivity or the increased contact area of the solder metals used in 3D ICs.