Theoretical investigation of the structural stability, electronic and optical properties of the double perovskite Cs2ZrX6 (X=Cl, Br, I)

材料科学 硫系化合物 卤化物 带隙 钙钛矿(结构) 半导体 热稳定性 密度泛函理论 电介质 直接和间接带隙 光电子学 硫族元素 化学稳定性 吸收(声学) 电子结构 化学物理 计算化学 无机化学 化学工程 结晶学 化学 复合材料 冶金 工程类
作者
Jing Liu,Meichen Li,Qiuju Han,Wenzhi Wu
出处
期刊:Materials Science in Semiconductor Processing [Elsevier BV]
卷期号:171: 107984-107984 被引量:24
标识
DOI:10.1016/j.mssp.2023.107984
摘要

In recent years, in order to solve the energy issue researchers have performed much investigations, among which inorganic metal halide chalcogenides have received extensive attention in the field of materials, energy and other fields for their excellent photovoltaic properties. However, the traditional halide chalcogenide has two deadly deficiencies, poor thermal stability and the presence of toxic lead elements, which prevent its applications. Compared with ABX3-type halide chalcogenides, double lead-free perovskites usually have the advantages of better thermal stability and less toxicity, which makes it easier to be commercialized. In addition, elemental substitution methods can be employed to modulate their energy bands and optical properties. Here, the structural stability, electronic and optical properties, and thermodynamic properties of cesium zirconium halide double perovskites Cs2ZrX6 (X = Cl, Br, I) are systematically investigated based on density functional theory (DFT) to predict their applications in the photovoltaic and optoelectronic industries. The computational results show that these cesium zirconium halide double perovskites have very good structural stability as well as special optical properties such as strong light absorption, large dielectric constant, and low reflectivity. Moreover, all of them belong to direct bandgap semiconductors and possess small effective masses, which indicates that the double perovskites could be potential candidates for future optoelectronic devices and applications.
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