Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor

Abstract Perovskite oxide semiconductor is unique for its capability to form epitaxial heterostructures with both dielectric and metallic perovskite oxides. The study underscores the potential of perovskite oxides for multi‐layer stacking, a key aspect in advancing semiconductor technology as silicon‐based devices evolve toward 3D stacked structures. Fabrication of the first double‐level double‐gate field‐effect transistors (DL DG‐FETs) is demonstrated, where each layer is epitaxially grown using all‐perovskite oxides. This resulted in improvements in subthreshold swing, current drivability, and field effect mobility. This innovation not only highlights the distinctive potential of perovskite oxides but also provides new avenues for integration with other perovskite oxides on Si for more advanced electronic functions.