钝化
材料科学
二苯基氧化膦
钙钛矿(结构)
光致发光
电致发光
锡
氧化物
化学工程
光电子学
纳米技术
高分子化学
冶金
工程类
图层(电子)
作者
Chenhui Wang,Siqi Cui,Yangyang Ju,Yu Chen,Shuai Chang,Haizheng Zhong
标识
DOI:10.1002/adfm.202301304
摘要
Abstract The performance of tin (Sn)‐based perovskite light‐emitting diodes (PeLEDs) lags behind their lead analogs due to the challenges of Sn 2+ oxidation, defect passivation, and fast crystallization. Herein, the passivation effects of diphenylphosphine oxide (DPPO) derivatives on the fabrication of PEA 2 SnI 4 films are investigated. The DPPO derivatives with hydroxyl group, or including substituent group with the potential to form hydroxyl group, are unfavorable passivators due to their positive effects in accelerating Sn 2+ oxidation. In comparison, amino‐functionalized DPPO molecule is an effective additive to enhance the photoluminescence of PEA 2 SnI 4 films due to the effective defect passivation as well as crystallinity improvement. Based on the optimized films, color‐stable pure‐red PeLEDs are demonstrated with a full width at half maximum of 23 nm at 630 nm, a maximum luminance of 451 cd m −2 , a maximum external quantum efficiency of 3.51%, and a half‐lifetime of 13.7 min at 102 cd m −2 . This work opens new prospects on the selection of effective molecular additives for Sn‐based perovskites.
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