Cross‐Scale Topography Achieved by MOPL with Positive Photoresist to Regulate the Cell Behavior

Abstract Cross‐scale micro‐nano structures play an important role in semiconductors, MEMS, chemistry, and cell biology. Positive photoresist is widely used in lithography due to the advantages of high resolution and environmental friendliness. However, cross‐scale micro‐nano structures of positive photoresist are difficult to flexibly pattern, and the feature resolution is limited by the optical diffraction. Here, cross‐scale patterned micro‐nano structures are achieved using the positive photoresist based on the femtosecond laser maskless optical projection lithography (MOPL) technique. The dependence between exposure dose and groove width is comprehensively analyzed, and a feature size of 112 nm is obtained at 110 µW. Furthermore, large‐area topography considering cell size is efficiently fabricated by the MOPL technique, which enables the regulation of cell behavior. The proposed protocol of achieving cross‐scale structures with the exact size by MOPL of positive photoresist would provide new avenues for potential applications in nanoelectronics and tissue engineering.