材料科学
热氧化
大气温度范围
碳化硅
氧化法
碳化物
分析化学(期刊)
硅
光电子学
冶金
化学工程
热力学
化学
色谱法
物理
工程类
作者
Mitsuaki Kaneko,Hideaki Takashima,Konosuke Shimazaki,Shigeki Takeuchi,Tsunenobu Kimoto
出处
期刊:APL Materials
[American Institute of Physics]
日期:2023-09-01
卷期号:11 (9)
摘要
The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO2)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 1300 °C. After oxidation, two different cooling processes—cooling down in N2 or O2 ambient—were adopted. Single photon emission was confirmed with second-order correlation function measurements. For the samples cooled in an N2 ambient, the density of interface single photon sources (SPSs) increased with decreasing oxidation temperature with a density that could be controlled over the 105 to 108 cm−2 range. For the O2 cooled samples, on the other hand, many interface SPSs were formed irrespective of the oxidation temperature. This is attributed to the low-temperature oxidation during the cooling process after oxidation.
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