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KTaO3 Wafers Doped with Sr or La Cations for Modeling Water-Splitting Photocatalysts: 3D Atom Imaging around Doping Cations

钽酸盐 兴奋剂 材料科学 拉曼光谱 Atom(片上系统) 分析化学(期刊) 半导体 拉曼散射 结晶学 化学 矿物学 光学 铁电性 光电子学 色谱法 物理 电介质 嵌入式系统 计算机科学
作者
Akira Sasahara,Koji Kimura,Hanggara Sudrajat,Naohisa Happo,Kouichi Hayashi,Hiroshi Ōnishi
出处
期刊:Journal of Physical Chemistry C [American Chemical Society]
卷期号:126 (46): 19745-19755 被引量:7
标识
DOI:10.1021/acs.jpcc.2c06080
摘要

Potassium tantalate (KTaO₃) is a highly efficient semiconductor photocatalyst for the overall water-splitting reaction. Doping a semiconductor photocatalyst with foreign metal cations typically increases the apparent quantum yield of the splitting reaction. In this study, we constructed a single-crystalline model of cation-doped photocatalysts, which would be suitable for future investigation with advanced surface-sensitive methods. Centimeter-sized (001)-oriented KTaO₃ wafers were doped with Sr or La cations in KCl flux. X-ray diffraction (XRD) revealed Sr- and La-containing perovskite-structured layers epitaxially covering bulk KTaO₃. On the Sr-doped wafer, the surface-layer lattice was expanded by 2% relative to the bulk lattice. X-ray fluorescence holography (XFH) was employed to determine the 3D short-range ordered structure around the K and Sr cations. Holograms obtained with Sr Kα fluorescence confirmed the simultaneous settling of Sr cations in the A and B sites. The placement of the Sr cations in B sites was supported by the TaO6 breathing vibration observed in Raman scattering. These experimental results suggested that a KTaO₃–Sr(Sr₁/₃Ta₂/₃)O₃ solid solution is generated by doping. Two La-containing phases, one with lattice contraction by 2% and the other with expansion by 0.4%, were recognized on the La-doped wafer. La Lα fluorescence holograms indicated a complex manner of doping. The obtained atom distribution around La cations was interpreted by the simultaneous La cation occupation at the A-site, B-site, and an interstitial site. Local lattice deformation was quantitatively deduced around the La cations occupying the interstitial site. Element composition determined by X-ray photoelectron spectroscopy revealed the enrichment of doping elements on the wafer surface. Nanometer-scale topography observed by atomic force microscopy suggested that doping concentrations should be optimized to provide flat, crystalline surfaces.
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