Wafer‐Scale Dry‐Transfer of Single‐Crystalline Transition Metal Dichalcogenides

The twisting and stacking of 2D materials have emerged as transformative strategies for discovering novel physical phenomena and designing advanced materials and devices. A significant challenge, however, is achieving pristine interfaces with precise angular control while maintaining the long-range order over large areas. In this work, a novel dry-transfer method is presented that enables the ultra-clean integration of epitaxial, single-crystalline transition metal dichalcogenides (TMDCs) via vacuum thermocompression bonding (VTCB). This technique facilitates the fabrication of wafer-scale twisting and stacking of single-crystalline TMDCs to form homo-and heterostructures with intrinsic material properties and precise angular control. The layer-by-layer reconstruction of single-crystalline multilayer 2H-and 3R-MoS2 is demonstrated, with structural, electrical, and optical properties comparable to those of the bulk counterpart. Furthermore, the approach is fully compatible with standard semiconductor fabrication workflows and equipment, offering a scalable pathway for automated high-throughput fabrication. This findings provide a new avenue for the large-scale production of multi-stacked materials and twist-electronic device arrays.