Efficiency enhancement of a Sb2Se3 solar cell after adding a Si3N4 interface layer

Silicon nitride (Si3N4) is essential in the preparation of silicon cells, which can increase the absorption of light and play a passivation effect. Si3N4 has excellent thermal stability and chemical inertness, which can be used to improve the photoelectric performance of antimony selenide (Sb2Se3) thin film solar cells. In this study, cadmium sulfide (CdS) surface formed via chemical bath deposition was modified by magnetron sputtered Si3N4. The smoothed CdS surface significantly improved the fill fact and current density of the cell. The efficiency of the solar cell with a fluorine-doped tin oxide(FTO)/CdS/Si3N4(1 nm)/Sb2Se3/Au structure reached 5.51%.