跨导
高电子迁移率晶体管
可靠性(半导体)
电气工程
计算机科学
电压
晶体管
光电子学
拓扑(电路)
物理
功率(物理)
工程类
量子力学
作者
F. Udrea,Martin Arnold,Loizos Efthymiou,Zafar Ayub Ansari,Orange Fung,John Findlay,K. Ledins,Giorgia Longobardi
标识
DOI:10.1109/ispsd49238.2022.9813659
摘要
We developed a novel 650V power ICeGaN TM (Integrated Circuit Enhancement GaN) platform with state-of-the-art static and dynamic performance, significantly enhanced ease-of-use and increased gate reliability achieved through monolithic integration of a smart gate interface together with the HEMT. The ICeGaN TM devices have a higher threshold voltage ~ 2.8V (unlike the conventional p-GaN HEMT) and a built-in Miller clamp in order to suppress effects such as dV/dt related spurious turn-on events and achieve very fast turn-off. Moreover, they offer a wide range of gate drive voltages, up to 20V (well in excess of the standard 7V for p-GaN HEMTs) without any compromise in the device transconductance or dynamic performance. In contrast to other existing GaN devices, the smart ICeGaN TM HEMT can be driven with standard silicon gate drivers and does not require negative voltages for turn-off, hence removing the need for external drive and clamping interfaces.
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