量子隧道
阈下摆动
晶体管
场效应晶体管
光电子学
材料科学
电气工程
兴奋剂
硅锗
泄漏(经济)
工程类
硅
电压
经济
宏观经济学
作者
Wei Wang,Pengfei Wang,Chunmin Zhang,Xian Lin,Xiaoyong Liu,Qi Sun,Peng Zhou,David Wei Zhang
标识
DOI:10.1109/ted.2013.2289075
摘要
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D technology computer aided design simulation. The enlarged tunneling area and enhanced tunneling rate dramatically increase the tunneling current when the device is turned on. Meanwhile, the off-leakage current of UTFET is suppressed because of the extended physical channel length. The on-state tunneling current of UTFET can be further improved by introducing an n + -doped Si delta layer under the source region. The inserted delta layer significantly shortens the band-to-band tunneling path, enlarges tunneling area, and thus enhances the tunneling rate of this device. The average value of the subthreshold swing (SS) of the optimized UTFET is 58 mV/dec when VGS is varied from 0 to 0.46 V. Using the SiGe-source UTFET structure with a delta layer, the merits of low leakage current, high drive current, and ultralow SS can be realized simultaneously.
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