UV-Resistant Nanostructured Anti-reflective Film for Achieving Efficiency Enhancement of Perovskite Solar Cells and Potential of Fabricating Large-Scale Cu(In, Ga)Se2 Solar Cells

Sticker-type transparent antireflective film (STAF) is applied to perovskite solar cells (PSCs) to reduce the reflection and improve the light-trapping ability of PSCs. However, the development of STAF is hindered by many factors, such as expensive materials, low actual service life, unsatisfactory antireflective effect, and a lack of research on stability. This work proposes an ultraviolet (UV)-resistant enhanced sticker-type nanostructure acrylic resin antireflective film (SNAAF), which is applied to the incident surface of PSCs. SNAAF is prepared by using a cleverly designed two-step peeling transfer process. The average reflectance of the related device is reduced by 4.06% through the entire visible light spectrum, which also helps achieve the champion performance of the PSCs with STAF. The excellent antireflection performance increases power conversion efficiency (PCE) from 20.77% to 22.1% owing to the significantly enhanced short-circuit current density by 5.5% with the SNAAF. Additionally, the target device maintains nearly 80% of its initial PCE after 480 h of irradiation with UV light (365 nm), far exceeding the exposure levels in IEC 61215. Moreover, the designed SNAAF is applicable to large-area Cu(In, Ga)Se2 (CIGS) solar cells (area: 225 cm2), which develops a practical external engineering strategy for optimizing device performance for different types of commercial solar cells.