Vanadium-Doped Induction of Bare Active Crystalline Planes of Tungsten Oxide and Its Excellent Anticorrosion Properties

The "pinning effect" of VO2 was used to expose the (110) crystalline plane of WO3 monoclinic phase to explore the contribution of the high-energy crystalline plane to the electrochemical performance of the vanadium–tungsten (VW) complexes. The characterizations of the prepared sample were done by XRD, SEM, and EDS. The impedance value of VW2 (VO2/WO3) was improved by 8730 ohm·cm2 over epoxy resin, thereby showing the best anticorrosion effect. The reason for the enhanced corrosion inhibition of the VW material was that the highly active (110) crystalline plane gave higher activity to the oxygen defects, which was conducive to the formation of hydroxyl groups by adsorption of H2O and O2. At the same time, electrochemical cathodic reaction was inhibited. Second, the active hydroxyl group on the plane of the (110) high-energy crystal plane formed hydrogen bonds with epoxy resin, which not only improved the interaction between corrosion inhibitor and epoxy resin but also resulted in the emergence of intercalated lamellar insoluble hydroxide, which improved the shielding property of the coating. Third, the reduction protection brought by the V4+ ion led to the advancement of the corrosion resistance of the VW2 complexes. The present study completed the research system of tungsten oxide, which was of guidance for the control of the crystal plane and the design of anticorrosion pigments.