异质结
紫外线
钙钛矿(结构)
光电子学
材料科学
半导体
晶体管
有机半导体
纳米技术
化学
电气工程
工程类
结晶学
电压
作者
Jiangnan Xia,Changsong Gao,Chung‐Kang Peng,Yu Liu,Pingan Chen,Huan Wei,Lang Jiang,Lei Liao,Huipeng Chen,Yuanyuan Hu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-05-23
卷期号:24 (22): 6673-6682
被引量:4
标识
DOI:10.1021/acs.nanolett.4c01356
摘要
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.
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