纳米电子学
数码产品
材料科学
过渡金属
石墨烯
纳米技术
光子学
可扩展性
工程物理
制作
计算机科学
化学
光电子学
物理
电气工程
工程类
病理
催化作用
数据库
医学
生物化学
替代医学
作者
Wonbong Choi,Nitin Choudhary,Gang Han,Juhong Park,Deji Akinwande,Young Hee Lee
出处
期刊:Materials Today
[Elsevier BV]
日期:2017-01-09
卷期号:20 (3): 116-130
被引量:2261
标识
DOI:10.1016/j.mattod.2016.10.002
摘要
Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and opto-electronics, to name a few. This article reviews the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g. MoS2, WS2, MoSe2, and WSe2). These materials are finding niche applications for next-generation electronics and optoelectronics devices relying on ultimate atomic thicknesses. Albeit several challenges in developing scalable and defect-free TMDs on desired substrates, new growth techniques compatible with traditional and unconventional substrates have been developed to meet the ever-increasing demand of high quality and controllability for practical applications. The fabrication of novel 2D TMDs that exhibit exotic functionalities and fundamentally new chemistry is highlighted. And finally, in parallel with the electronics, the considerable effort devoted to using these materials for energy and sensing applications is discussed in detail.
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