镍
铜
接受者
深能级瞬态光谱
材料科学
兴奋剂
蚀刻(微加工)
分析化学(期刊)
无机化学
化学
冶金
硅
凝聚态物理
光电子学
纳米技术
物理
图层(电子)
色谱法
作者
Nikolai Yarykin,J. Weber
标识
DOI:10.1002/pssa.202100135
摘要
Modifications of the deep‐level spectrum of copper‐doped Si due to the interaction with mobile nickel species are studied using the deep‐level transient spectroscopy (DLTS) and Laplace‐DLTS techniques. The neutral interstitial nickel atoms () are introduced at near room temperatures by etching in a Ni‐contaminated KOH aqueous solution. Two levels similar to the donor and acceptor levels of substitutional nickel are observed to form as a result of the copper−nickel interaction. Analysis of the depth profiles leads to a tentative conclusion that the levels belong to atoms, which are influenced by a nearby copper−nickel complex. The disturbed defects are formed via intermediate electrically active Ni−Cu complexes.
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