Ultrathin and Ultrasensitive Direct X‐ray Detector Based on Heterojunction Phototransistors

Most contemporary X-ray detectors adopt device structures with non/low-gain energy conversion, such that a fairly thick X-ray photoconductor or scintillator is required to generate sufficient X-ray-induced charges, and thus numerous merits for thin devices, such as mechanical flexibility and high spatial resolution, have to be compromised. This dilemma is overcome by adopting a new high-gain device concept of a heterojunction X-ray phototransistor. In contrast to conventional detectors, X-ray phototransistors allow both electrical gating and photodoping for effective carrier-density modulation, leading to high photoconductive gain and low noise. As a result, ultrahigh sensitivities of over 105 μC Gyair−1 cm−2 with low detection limit are achieved by just using an ≈50 nm thin photoconductor. The employment of ultrathin photoconductors also endows the detectors with superior flexibility and high imaging resolution. This concept offers great promise in realizing well-balanced detection performance, mechanical flexibility, integration, and cost for next-generation X-ray detectors.