薄板电阻
X射线光电子能谱
分压
材料科学
无定形固体
分析化学(期刊)
兴奋剂
薄膜
基质(水族馆)
溅射沉积
电阻率和电导率
溅射
氧气
化学
化学工程
图层(电子)
复合材料
结晶学
纳米技术
工程类
地质学
有机化学
电气工程
海洋学
色谱法
光电子学
作者
Natthawirot Somjaijaroen,Rachsak Sakdanuphab,Narong Chanlek,Prae Chirawatkul,Aparporn Sakulkalavek
出处
期刊:Vacuum
[Elsevier BV]
日期:2019-05-16
卷期号:166: 212-217
被引量:17
标识
DOI:10.1016/j.vacuum.2019.05.017
摘要
Cu-doped SnO2 thin films were deposited on a glass substrate using radio frequency magnetron sputtering. The effects of varying the O2 partial pressure during the deposition process and post-O2 plasma treatment at 420 °C were investigated. Bulk and surface oxidation states were measured by X-ray absorption near-edge structure spectroscopy and X-ray photoelectron spectroscopy. The as-deposited films exhibited oxygen deficient compositions and Cu+ or Cu2+ ions, which depend on the deposited O2 partial pressure. After the post-plasma treatment, the films changed from an amorphous structure into a low crystalline film. X-ray diffraction results indicated substitutional doping, wherein some Sn4+ ions were replaced with Cu+ or Cu2+ ions. The O2 plasma treatment can remove Cu2+ and O2− from the film surface. The oxygen deficiency defects and Cu+- or Cu2+- doped present at the surface are the key factors in controlling the sheet resistance of the Cu-doped SnO2 film. The minimum sheet resistance was obtained after the plasma treatment of the films deposited at a 2% O2 partial pressure.
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