CuNi Alloy Electrodeposition for Microbumps Using Benzotriazole

金属间化合物 苯并三唑 材料科学 限制电流 合金 电迁移 电化学 电流密度 冶金 扩散 电极 化学工程 复合材料 化学 物理化学 量子力学 热力学 物理 工程类
作者
Karel Haesevoets,Aleksandar Radisic,Philippe M. Vereecken
出处
期刊:Meeting abstracts 卷期号:MA2018-01 (19): 1264-1264
标识
DOI:10.1149/ma2018-01/19/1264
摘要

A pressing issue in flip-chip and stacked integrated circuit (SIC) technology is the breakdown of microbumps over time. These microbumps are the physical and electrical connections between the chips. They consist out of Cu stages on both chips which are typically soldered together by Sn. Due to diffusion and electromigration, Cu and Sn form two intermetallic phases of which Cu 3 Sn induces microvoids at the Cu 3 Sn/Cu interface causing in turn breakdown of the microbump. Chemical modelling shows that a CuNi alloy, with an approximate 9:1 Cu:Ni ratio, together with Sn doesn’t form the Cu 3 Sn intermetallic compound thus tremendously improving the stability of the microbumps, and therefore the chip. By far the most feasible method to manufacture microbumps is galvanostatic electrochemical deposition. However, electrochemical CuNi co-deposition from a single deposition bath requires current densities higher than the limiting current density of copper causing rough, uncontrolled dendritical growth of Cu. Existing CuNi baths are citrate based but citrates can corrupt other features of the chip manufacturing process. In this work the possibility of smooth, solid solution electrodeposition of CuNi in a 9:1 ratio using benzotriazole (BTA) is investigated. Benzotriazole is a well-known corrosion inhibitor for copper. Here we show that BTA has a tremendous potential for suppressing Cu 2+ reduction and limiting the uncontrolled mass-transfer limited Cu growth. First we demonstrate with a RDE voltammetric investigation, together with viscosimetry, the effects of the combination of an existing CuSO 4 and a NiSO 4 bath on Cu 2+ reduction. Then, we introduce BTA and show the large difference between the working of BTA in the combined bath and in a CuSO 4 only bath. Later, we improve the working of BTA by increasing the pH thus defining a parameter window for which we’re able to deposit CuNi with a maximum suppressing effect of BTA. CuNi deposits on metal pellets with a Cu substrate layer are investigated by SEM and EDX to evaluate the morphology and elemental composition of the deposit. We were able to demonstrate the change in CuNi morphology upon increasing the BTA concentration from 0 to 1000 ppm. No distinction could be made in Cu or Ni rich areas over different deposit areas indicating that we’re able to deposit CuNi as a solid solution. Figure 1

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