材料科学
稀释
薄脆饼
反射器(摄影)
蓝宝石
光电子学
发光二极管
晶片键合
电极
波长
二极管
光学
金属
光源
激光器
冶金
化学
生态学
物理
物理化学
生物
作者
Jiabin Yan,Jialei Yuan,Yuxin Jiang,Hongbo Zhu,Hoi Wai Choi,Yongjin Wang
标识
DOI:10.35848/1882-0786/ac4e24
摘要
We demonstrate a vertical AlGaN DUV LED with an emission wavelength of 272 nm and submicron thickness. The device epilayers’ thickness is reduced to ∼670 nm by a combination of wafer bonding and thinning techniques, and this results in the thinnest vertical DUV LED reported to date. A light-emitting surface with a root mean square value of 74.7 nm is also induced by the thinning process without any other surface-roughing treatments. An n-contact electrode with a mesh geometry is adopted to expose the emission region, while the bottom metal electrode functions as a reflector to reflect downward-propagating light in an upward direction.
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