Efficient Solid‐State Photoluminescence of Graphene Quantum Dots Embedded in Boron Oxynitride for AC‐Electroluminescent Device

Emerging graphene quantum dots (GQDs) have received much attention for use as next-generation light-emitting diodes. However, in the solid-state, π-interaction-induced aggregation-caused photoluminescence (PL) quenching (ACQ) in GQDs makes it challenging to realize high-performance devices. Herein, GQDs incorporated with boron oxynitride (GQD@BNO) are prepared from a mixture of GQDs, boric acid, and urea in water via one-step microwave heating. Due to the effective dispersion in the BNO matrix, ACQ is significantly suppressed, resulting in high PL quantum yields (PL-QYs) of up to 36.4%, eightfold higher than that of pristine GQD in water. The PL-QY enhancement results from an increase in the spontaneous emission rate of GQDs due to the surrounding BNO matrix, which provides a high-refractive-index material and fluorescence energy transfer from the larger-gap BNO donor to the smaller-gap GQD acceptor. A high solid-state PL-QY makes the GQD@BNO an ideal active material for use in AC powder electroluminescent (ACPEL) devices, with the luminance of the first working GQD-based ACPEL device exceeding 283 cd m-2 . This successful demonstration shows promise for the use of GQDs in the field of low-cost, ecofriendly electroluminescent devices.