单层
带隙
半导体
材料科学
宽禁带半导体
凝聚态物理
半金属
直接和间接带隙
原子轨道
价(化学)
光电子学
纳米技术
化学
物理
电子
有机化学
量子力学
作者
Sefaattin Tongay,Deepa S. Narang,Jun Kang,Wen Fan,Changhyun Ko,Alexander Luce,Kevin X. Wang,Joonki Suh,K.D. Patel,V. M. Pathak,Jingbo Li,Junqiao Wu
摘要
Monolayer Mo1−xWxSe2 (x = 0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1−xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1−xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors.
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