ZnCdS films for solar cell and photodetector applications deposited by In Situ chemical doping of CdS with Zn

Abstract ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X‐ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn 0.049 Cd 0.951 S (JCPDS 40‐834) as well as CdS greenockite (hexagonal, JCPDS 41‐1049) and hawleyite (cubic, JCPDS 10‐0454) phases. A comparison of the optical transmittance spectra for undoped and Zn‐doped films showed that the cut‐off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn‐doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.