成核
材料科学
纳米晶硅
结晶
硅
非晶硅
无定形固体
化学物理
氢
等离子体增强化学气相沉积
化学工程
化学气相沉积
纳米晶
晶体硅
纳米技术
结晶学
光电子学
化学
有机化学
工程类
作者
Saravanapriyan Sriraman,Sumit Agarwal,Eray S. Aydil,Dimitrios Maroudas
出处
期刊:Nature
[Springer Nature]
日期:2002-07-01
卷期号:418 (6893): 62-65
被引量:380
摘要
Hydrogenated amorphous and nanocrystalline silicon films manufactured by plasma deposition techniques are used widely in electronic and optoelectronic devices. The crystalline fraction and grain size of these films determines electronic and optical properties; the nanocrystal nucleation mechanism, which dictates the final film structure, is governed by the interactions between the hydrogen atoms of the plasma and the solid silicon matrix. Fundamental understanding of these interactions is important for optimizing the film structure and properties. Here we report the mechanism of hydrogen-induced crystallization of hydrogenated amorphous silicon films during post-deposition treatment with an H(2) (or D(2)) plasma. Using molecular-dynamics simulations and infrared spectroscopy, we show that crystallization is mediated by the insertion of H atoms into strained Si-Si bonds as the atoms diffuse through the film. This chemically driven mechanism may be operative in other covalently bonded materials, where the presence of hydrogen leads to disorder-to-order transitions.
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