串联
降级(电信)
钙钛矿(结构)
商业化
硅
光伏系统
材料科学
纳米技术
计算机科学
工程物理
光电子学
电气工程
化学工程
业务
物理
工程类
电信
复合材料
营销
作者
Jae Hyun Park,Jin Young Kim
出处
期刊:Matter
[Elsevier BV]
日期:2022-10-01
卷期号:5 (10): 3091-3093
被引量:3
标识
DOI:10.1016/j.matt.2022.09.015
摘要
As the efficiency of perovskite/Si tandem solar cells (PVSK/Si TSCs) surpasses the practical limit of single-junction cells, consideration of device stability is critical for real-world application. Demonstrated recently, potential-induced degradation (PID) and partial recovery can occur in PVSK/Si TSCs depending on the external potential, indicating that the hitherto underresearched PID issues must be addressed for successful commercialization. As the efficiency of perovskite/Si tandem solar cells (PVSK/Si TSCs) surpasses the practical limit of single-junction cells, consideration of device stability is critical for real-world application. Demonstrated recently, potential-induced degradation (PID) and partial recovery can occur in PVSK/Si TSCs depending on the external potential, indicating that the hitherto underresearched PID issues must be addressed for successful commercialization. Potential-induced degradation in perovskite/silicon tandem photovoltaic modulesXu et al.Cell Reports Physical ScienceAugust 31, 2022In BriefApplying a −1,000 V voltage bias to perovskite/silicon tandem PV modules for 1 day causes potential induced degradation with a ∼50% PCE loss, which raises concerns for tandem commercialization. During such testing, Xu et al. observe no obvious shunt in silicon subcells but degradation in perovskite subcells caused by the diffusion of the elements. Full-Text PDF Open Access
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