材料科学
三元运算
硅
氧化物
化学稳定性
二进制数
氧化硅
三元化合物
热力学
物理化学
无机化学
冶金
化学
程序设计语言
数学
氮化硅
物理
算术
计算机科学
作者
K. J. Hubbard,Darrell G. Schlom
标识
DOI:10.1557/jmr.1996.0350
摘要
Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li 2 O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc 2 O 3 , Y 2 O 3 , and Re 2 O 3 , where Re is a rare earth), ThO 2 , UO 2 , ZrO 2 , HfO 2 , and Al 2 O 3 . Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO 2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.
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