兴奋剂
材料科学
飞秒
光子能量
吸收(声学)
衰减系数
折射率
带隙
光子
双光子吸收
激发
功勋
非线性光学
原子物理学
分子物理学
光学
光电子学
激光器
物理
量子力学
复合材料
作者
Yingfei Sun,Zhongguo Li,Yu Fang,Xingzhi Wu,Wenfa Zhou,Zhitai Jia,Junyi Yang,Yinglin Song
摘要
We report the spectral dependence of the three-photon absorption coefficient γ and third-order nonlinear refractive index n2 in pristine, Sn-doped and Fe-doped β-Ga2O3 crystals using 190 fs pulses in the range of 540–750 nm, i.e., photon energy between half and one-third of the bandgap Eg. The nonlinear coefficient n2 is found to be independent of Sn or Fe doping, and the maximum value of n2 is about 4 × 10−19 m2/W when the photon energy is near Eg/2. However, we observe that Fe doping can significantly enhance the γ value in the range of 540–600 nm (near Eg/2) while doping has negligible impact on γ for wavelength larger than 620 nm. Femtosecond pump-probe measurements show that Fe doping induced a fast (∼50 ps) carrier decay process after photo excitation, which could be attributed to the Fe induced deep trap states. We obtain three-photon figures of merit that allow operational intensities up to 100 GW/cm2. Our results indicate that β-Ga2O3 has great potential for all-optical switching applications in red and near IR regimes.
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