材料科学
光电子学
钝化
电容
电容器
泄漏(经济)
电介质
电压
异质结
晶体管
原子层沉积
作者
Lin Hao,Gang He,Lesheng Qiao,Zebo Fang,Bo Yao
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2021-02-01
卷期号:42 (2): 140-143
标识
DOI:10.1109/led.2020.3048014
摘要
In current work, the impact of ammonium sulfide (NH4)2S solution passivation with varied pH value on the Yb2O3/n-GaSb interface has been investigated comparatively. Compared with control samples, the neutral (NH4)2S solution passivation can effectively reduce oxides layer on GaSb surface and gate leakage via X-ray photoelectron spectroscopy (XPS) measurements and electrical characterization. High-low frequency capacitance method was used to evaluate interface-state density ${D}_{{\text {it}}}$ , it was found that capping with Yb2O3 can delay the interface-state generation and the lowest $D_{{\text {it}}}$ value of ${5.18}\times {10} ^{{12}}$ cm−2 eV−1 for Yb2O3/GaSb capacitor with neutral (NH4)2S was achieved. Moreover, the possible leakage current conduction mechanisms for capacitors measured at room temperature and low temperature have also been discussed systematically.
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