1.37 kV/12 A NiO/β-Ga2O3Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

Ga ₂ O ₃ power diodes with high voltage/current ratings, superior dynamic performance, robust reliability, and potentially easy-to-implement are a vital milestone on the Ga ₂ O ₃ power electronics roadmap. In this letter, a better tradeoff between fast reverse-recovery and rugged surge-current capability has been demonstrated in NiO/Ga ₂ O ₃ p-n heterojunction diodes (HJDs). With the double-layered p-NiO design, the HJD exhibits superior electrostatic performances, including a high breakdown voltage of 1.37 kV, a forward current of 12.0 A with a low on-state resistance of 0.26 Ω, yielding a static Baliga's figure of merit (FOM) of 0.72 GW/cm ² . Meanwhile, the fast switching performance has been observed with a short reverse recovery time in nanosecond timescale (11 ns) under extreme switching conditions of di/dt up to 500 A/μs _. In particular, for a 9-mm ² HJD, a large surge current of 45 A has also been obtained in a 10-ms surge transient, thanks to the conductivity modulation effect. These results are comparable with those of the advanced commercial SiC SBDs and have significantly outperformed the past reported Ga ₂ O ₃ HJDs, fulfilling the enormous potential of Ga ₂ O ₃ in power applications.