MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

We summarize our recent progress in Metal organic vapor phase epitaxy (MOVPE) van der Waals epitaxy of wafer-scale 2D layered hexagonal boron nitride (h-BN) on sapphire and subsequently grown III-N materials. This one step growth process allows for mechanical transfer of GaN-based devices from h-BN on sapphire to various supports. We first review the growth of h-BN on unpatterned and patterned sapphire templates. Second, we describe h-BN growth on dielectric pre-patterned sapphire templates, which enables dicing-free GaN-based device structures’ pick-and-place heterogenous integration of III-N devices. Third, we review the growth of self-assembled 1D GaN-based nanowire light emitting diode (LED) structures on layered 2D h-BN for mechanical transfer of nanowire LEDs. Together, these results illustrate the potential of wafer-scale van der Waals h-BN MOVPE to enhance the III-N device functionality and to improve III-N processing technology.