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Effect of Nitrogen Ratio in Sputtering on the Quality of Film Formation and Electron Emission Properties of Nitride Films

材料科学 溅射 氮化物 氮化钛 氮化硼 电阻率和电导率 电导率 氮化钽 氮化锆 薄膜 分析化学(期刊) 复合材料 冶金 纳米技术 图层(电子) 化学 工程类 物理化学 色谱法 电气工程
作者
Yueqing Gu,J. H. Li,Dan Wang,Na Zhang
出处
期刊:Coatings [Multidisciplinary Digital Publishing Institute]
卷期号:15 (1): 55-55
标识
DOI:10.3390/coatings15010055
摘要

Nitride films such as tantalum nitride (TaN), titanium nitride (TiN) and boron nitride (BN) are widely used in aerospace and vacuum electronics. The electron emitting properties of these nitride films are of great interest due to the phenomenon of surface electron emission when the films are irradiated, leading to surface modification. In this study, we have prepared three kinds of thin films, TaN, TiN and BN, by sputtering. Then the effect of the nitrogen component on the film formation quality and the dependence of the electron emission coefficient (EEC) on the film’s physical properties were investigated. The results of elemental analysis show that by rising the nitrogen gas flow during sputtering, the N elemental ratios inside the TaN and TiN films can be increased, and the film resistivity decreases follow, while BN films do not show such a tunable characteristic of the elemental ratios or resistivity. The conductivity test results show that TaN and TiN films exhibit conductive properties like those of semiconductor materials. The proportion of N elements inside the films has a significant effect on the film conductivity, namely, the conductivity of the film shows an upward trend with the increase in the proportion of N elements. The EEC test shows that TaN and TiN films with good conductive properties have relatively low EEC values, which are generally lower than 2.10. For TaN and TiN, the test results show that the EEC decreases with the increase of the conductivity. The EEC peak values are 1.92 and 1.56 for TaN and TiN films when their resistivities are 1.45 × 10−5 Ω·m and 7.26 × 10−6 Ω·m, respectively. The EEC values of BN are larger than TaN and TiN, with an EEC peak value higher than 2.49, and the electron energy to obtain the peak value is about 250 eV. The results are instructive for revealing the electron emission regularity of nitride thin films.

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