材料科学
高电子迁移率晶体管
缓冲器(光纤)
光电子学
晶体管
无线电频率
泄漏(经济)
基质(水族馆)
热稳定性
电气工程
电压
宏观经济学
工程类
地质学
经济
物理
海洋学
量子力学
作者
You-Chen Weng,Heng‐Tung Hsu,Yi‐Fan Tsao,Debashis Panda,Hsuan-Yao Huang,Min-Lu Kao,Yu-Pin lan,Edward Yi Chang,Ching-Ting Lee
标识
DOI:10.1149/2162-8777/acbf72
摘要
In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequency (RF) applications. The HEMTs also demonstrated low initial vertical leakage current, high thermal stability, and smaller drain-lag with reduced leakage currents as compared to the devices using step-graded (SG) AlGaN buffer. Also, the device showed improved RF performances with higher f T and f max as compared to the devices with SG buffer.
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